Refer to JEE Physics Semiconductor Electronics MCQs Set B provided below. JEE (Main) Full Syllabus Physics MCQs with answers available in Pdf for free download. The MCQ Questions for Full Syllabus Physics with answers have been prepared as per the latest syllabus, JEE (Main) books and examination pattern suggested in Full Syllabus by JEE (Main), NCERT and KVS. Multiple Choice Questions for Semiconductor Electronics are an important part of exams for Full Syllabus Physics and if practiced properly can help you to get higher marks. Refer to more Chapter-wise MCQs for JEE (Main) Full Syllabus Physics and also download more latest study material for all subjects
MCQ for Full Syllabus Physics Semiconductor Electronics
Full Syllabus Physics students should refer to the following multiple-choice questions with answers for Semiconductor Electronics in Full Syllabus. These MCQ questions with answers for Full Syllabus Physics will come in exams and help you to score good marks
Semiconductor Electronics MCQ Questions Full Syllabus Physics with Answers
Question: A transistor cannot be used as an
- a) Rectifier
- b) Modulator
- c) Oscillator
- d) Amplifier
Answer: Rectifier
Question:
- a) 6 V
- b) 14 V
- c) 20 V
- d) 26 V
Answer: 6 V
Question:
- a) 288
- b) 240
- c) 480
- d) 180
Answer: 288
Question:
- a)
- b)
- c) A.B
- d) A + B
Answer:
Question:
- a) 1 A
- b) 2 A
- c) 4 A
- d) Zero
Answer: 1 A
Question:
- a) 89.1
- b) 78.2
- c) 450
- d) 79.1
Answer: 89.1
Question:
- a) 0.4A
- b) 0.2A
- c) 0.6A
- d) 0.8A
Answer: 0.4A
Question:
- a) 6 V
- b) 10 V
- c) 8 V
- d) 4 V
Answer: 6 V
Question:
- a) Common emitter connection
- b) All of these
- c) Common base connection
- d) Common collector connection
Answer: Common emitter connection
Question:
- a) 0.03 A
- b) 0.036 A
- c) 0.02 A
- d) Zero
Answer: 0.03 A
Question: Three amplifiers each having voltage gain 10, are connected in series. The resultant gain would be
- a) 1000
- b) 30
- c) 10
- d)
Answer: 1000
Question:
- a) X is n-type, Y is p-type and the junction is reverse biased
- b) X is p-type, Y is n-type and the junction is reverse biased
- c) X is n-type, Y is p-type and the junction is forward biased
- d) X is p-type, Y is n-type and the junction is forward biased
Answer: X is n-type, Y is p-type and the junction is reverse biased
Question: The maximum efficiency of a full wave rectifier is
- a)
- b)
- c) 40%
- d) 80%
Answer:
Question:
- a) OR gate
- b) AND gate
- c) NOT gate
- d) NOR gate
Answer: OR gate
Question:
- a) Full wave rectified
- b) ac
- c) Half wave rectified
- d) Quarter wave rectified
Answer: Full wave rectified
Question: Which of the following pn junction is not used in reverse bias?
- a) Both
- b) Solar cell
- c) LED
- d) None of these
Answer: Both
Question:
- a)
- b)
- c)
- d) Zero
Answer:
Question: A crystal has bcc structure and its lattice constant is 3.6 Å. What is the atomic radius?
- a) 1.56 Å
- b) 1.27 Å
- c) 1.8 Å
- d) 3.6 Å
Answer: 1.56 Å
Question:
- a) 1A
- b) 2A
- c) 3A
- d) Zero
Answer: 1A
Question: In an n-p-n transistor working in active mode, the depletion region
- a) At emitter-base junction is thinner than that at collector-base junction
- b) At the two junctions have equals width
- c) At emitter-base junction is wider than that at collector-base junction
- d) Is not formed
Answer: At emitter-base junction is thinner than that at collector-base junction
More Questions..................................
Question:
- a) 0.02mA
- b) 0.03mA
- c) 0.08mA
- d) 0.09mA
Answer: 0.02mA
Question: A p-n photodiode is made of a material with a band gap of 2.0 eV. The minimum frequency of the radiation that can be absorbed by the material is nearly
- a) 5 × 1014 Hz
- b) 1 × 1014 Hz
- c) 10 × 1014 Hz
- d) 20 × 1014 Hz
Answer: 5 × 1014 Hz
Question: The cations and anions are arranged in alternate form in
- a) Ionic crystal
- b) Covalent crystal
- c) Semi-conductor crystal
- d) Metallic crystal
Answer: Ionic crystal
Question: In semiconductors at room temperature
- a) The valence band is partially empty and the conduction band is partially filled
- b) The valence band is completely filled and the conduction band is partially filled
- c) The valence band is completely filled
- d) The conduction band is completely empty
Answer: The valence band is partially empty and the conduction band is partially filled
Question:
- a)
- b)
- c)
- d)
Answer:
Question: Which one of the following bonds produces a solid that reflects light in the visible region and whose electrical conductivity decreases with temperature and has high melting point?
- a) Metallic bonding
- b) Covalent bonding
- c) Ionic bonding
- d) van der Waal's bonding
Answer: Metallic bonding
Question: In good conductors of electricity, the type of bonding that exists is
- a) Metallic
- b) van der Waal’s
- c) Ionic
- d) Covalent
Answer: Metallic
Question: In an insulator, the forbidden energy gap between the valence band and conduction band is of the order of
- a) 5 eV
- b) 1 eV
- c) 0.1 MeV
- d) 1 MeV
Answer: 5 eV
Question: A p-n junction has a depletion layer thickness of the order of
- a) 10–6 m
- b) 10–4 m
- c) 10–8 m
- d) 10–10 m
Answer: 10–6 m
Question:
- a) 5 × 109 m–3
- b) 3 × 106 m–3
- c) 3.0 × 1022 m–3
- d) 1.5 × 1016 m–3
Answer: 5 × 109 m–3
Question: If a small amount of antimony is added to germanium crystal
- a) There will be more free electrons than hole in the semiconductor
- b) The antimony becomes an acceptor atom
- c) It becomes a p-type semiconductor
- d) Its resistance is increased
Answer: There will be more free electrons than hole in the semiconductor
Question: In forward biasing of the p-n junction
- a) The positive terminal of the battery in connected to p-side and the depletion region becomes thin
- b) The positive terminal of the battery is connected to p-side and the depletion region becomes thick
- c) The positive terminal of the battery is connected to n-side and the depletion region becomes thin
- d) The positive terminal of the battery is connected to n-side and the depletion region becomes thick
Answer: The positive terminal of the battery in connected to p-side and the depletion region becomes thin
Question: In a reverse-biased p-n junction, when the applied bias voltage is equal to the breakdown voltage, then
- a) Voltage remains constant while current increases sharply
- b) Current remains constant while voltage increase sharply
- c) Current and voltage increase
- d) Current and voltage decrease
Answer: Voltage remains constant while current increases sharply
Question: In the case of forward biased of p-n junction, which one of the following figures correctly depicts the direction of flow of carriers?
- a)
- b)
- c)
- d)
Answer:
Question: When arsenic is added as an impurity to silicon, the resulting material is
- a) n-type semiconductor
- b) p-type semiconductor
- c) p-type conductor
- d) n-type conductor
Answer: n-type semiconductor
Question: To obtain a p-type germanium semiconductor, it must be doped with
- a) Indium
- b) Phosphorus
- c) Arsenic
- d) Antimony
Answer: Indium
Question: The cause of the potential barrier in a p-n diode is
- a) Concentration of positive and negative charges near the junction
- b) Depletion of positive charges near the junction
- c) Concentration of positive charges near the junction
- d) Depletion of negative charges near the junction
Answer: Concentration of positive and negative charges near the junction
Question: A semi-conducting device is connected in a series circuit with a battery and a resistance. A current is found to pass through the circuit. If the polarity of the battery is reversed, the current drops to almost zero. The device may be
- a) A p-n junction
- b) A p-type semi-conductor
- c) An intrinsic semi-conductor
- d) An n-type semi-conductor
Answer: A p-n junction
Question: A p-n junction diode can be used as
- a) Rectifier
- b) Amplifier
- c) Oscillator
- d) Condenser
Answer: Rectifier
Question: In a p-type semiconductor, the majority carriers of current are
- a) Holes
- b) Neutrons
- c) Electrons
- d) Protons
Answer: Holes
Question: In forward bias, the width of potential barrier in a p-n junction diode
- a) Decreases
- b) Increases
- c) Remains constant
- d) Immobile ions
Answer: Decreases
Question: Depletion layer consists of
- a) Immobile ions
- b) Electrons
- c) Protons
- d) Mobile ions
Answer: Immobile ions
Question: In a junction diode, the holes are due to
- a) Missing of electrons
- b) Protons
- c) Neutrons
- d) Extra electrons
Answer: Missing of electrons
Question: In a PN junction
- a) High potential at N side and low potential at P side
- b) High potential P side and low potential at N side
- c) P and N both are at same potential
- d) Undetermined
Answer: High potential at N side and low potential at P side
Question:
- a) In forward bias the voltage across R is V
- b) In reverse bias the voltage across R is V
- c) In reverse bias the voltage across R is 2V
- d) In forward bias the voltage across R is 2V
Answer: In forward bias the voltage across R is V
Question: Reverse bias applied to a junction diode
- a) Raises the potential barrier
- b) Increases the minority carrier current
- c) Increases the majority carrier current
- d) Lowers the potential barrier
Answer: Raises the potential barrier
Question: Barrier potential of a p-n junction diode does not depend on
- a) Diode design
- b) Temperature
- c) Forward bias
- d) Doping density
Answer: Diode design
Question: In a p-n junction photo cell, the value of the photo-electromotive force produced by monochromatic light is proportional to
- a) The intensity of the light falling on the cell
- b) The voltage applied at the p-n junction
- c) The barrier voltage at the p-n junction
- d) The frequency of the light falling on the cell
Answer: The intensity of the light falling on the cell
Question: Choose the only false statement from the following
- a) The resistivity of a semiconductor increases with increase in temperature
- b) The conductivity of a semiconductor increases with increase in temperature
- c) Substances with energy gap of the order of 10 eV are insulators
- d) In conductors the valence and conduction bands overlap
Answer: The resistivity of a semiconductor increases with increase in temperature
Question: Zener diode is used as
- a) Stabilisation
- b) Amplification
- c) Rectification
- d) Producing oscillations in an oscillator
Answer: Stabilisation
Question: Application of a forward bias to a p-n junction
- a) Increases the diffusion of conduction electrons from n side to p side
- b) Increases the electric field in the depletion zone
- c) Increases the potential difference across the depletion zone
- d) Widens the depiction zone
Answer: Increases the diffusion of conduction electrons from n side to p side
Question: A forward biased diode is
- a)
- b)
- c)
- d)
Answer:
Question:
- a) A p-type semiconductor
- b) A metal
- c) An insulator
- d) A n-type semiconductor
Answer: A p-type semiconductor
Question: In a zener diode, break down occurs in reverse bias due to
- a) Internal field emission
- b) All of these
- c) Impact ionisation
- d) High doping concentration
Answer: Internal field emission
Question: A p-n photodiode is fabricated from a semiconductor with a band gap of 2.5 eV. It can detect a signal of wavelength
- a) 4000 Å
- b) 4000 nm
- c) 6000 Å
- d) 6000 nm
Answer: 4000 Å
Question: In a p-n junction, depletion region contains
- a) Equal number of donor and acceptor ions
- b) No charges at all
- c) Equal number of conduction electrons and holes
- d) More conduction holes than electrons
Answer: Equal number of donor and acceptor ions
Question:
- a) 0.1 ampere
- b) 0.5 ampere
- c) Zero
- d) 1 ampere
Answer: 0.1 ampere
Question:
- a) 0.5 A
- b) 0.75 A
- c) Zero
- d) 0.25 A
Answer: 0.5 A
Question: C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because
- a) The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
- b) The four bonding electrons in the case of C lie in the third orbit, whereas for Si they lie in the fourth orbit
- c) In case of C the valance band is not completely filled at absolute zero temperature
- d) In case of C the conduction band is partly filled even at absolute zero temperature
Answer: The four bonding electrons in the case of C lie in the second orbit, whereas in the case of Si they lie in the third
Question:
- a) 5 mA
- b) 10 mA
- c) 15 mA
- d) 20 mA
Answer: 5 mA
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