Refer to JEE Physics Semiconductor Electronics MCQs Set A provided below available for download in Pdf. The MCQ Questions for Full Syllabus Physics with answers are aligned as per the latest syllabus and exam pattern suggested by JEE (Main), NCERT and KVS. Multiple Choice Questions for Semiconductor Electronics are an important part of exams for Full Syllabus Physics and if practiced properly can help you to improve your understanding and get higher marks. Refer to more Chapter-wise MCQs for JEE (Main) Full Syllabus Physics and also download more latest study material for all subjects
MCQ for Full Syllabus Physics Semiconductor Electronics
Full Syllabus Physics students should refer to the following multiple-choice questions with answers for Semiconductor Electronics in Full Syllabus.
Semiconductor Electronics MCQ Questions Full Syllabus Physics with Answers
Question: The semiconductors are generally
- a) Tetravalent
- b) Trivalent
- c) Divalent
- d) Monovalent
Answer: Tetravalent
Question: The resistivity of a semiconductor depends upon
- a) The nature of atoms
- b) Size and types of motion
- c) Type of bonds
- d) Size of the atom
Answer: The nature of atoms
Question: The impurity atoms with which pure silicon should be doped to make a p-type semiconductor are those of
- a) Boron
- b) Copper
- c) Antimony
- d) Phosphorus
Answer: Boron
Question: In semiconductors, which of the following relations is correct at thermal equilibrium?
- a)
- b)
- c)
- d)
Answer:
Question: A pure semiconductor has
- a) A finite resistance which decreases with temperature
- b) A finite resistance which increases with temperature
- c) A finite resistance which does not depend upon temperature
- d) An infinite resistance at 0°C
Answer: A finite resistance which decreases with temperature
Question: The rate of recombination or generation are governed by the law(s) of
- a) Thermodynamics
- b) Chromodynamics
- c) Electrical neutrality
- d) Mass conservation
Answer: Thermodynamics
Question: An n-type semiconductor is electrically
- a) Neutral
- b) Negative
- c) May be positive or negative
- d) Positive
Answer: Neutral
Question: A solid having uppermost energy band partially filled with electrons is called
- a) A conductor
- b) A semiconductor
- c) None of these
- d) An insulator
Answer: A conductor
Question: The energy gap for an insulator may be
- a) 6 eV
- b) 0.7 eV
- c) 0.02 eV
- d) 1.1 eV
Answer: 6 eV
Question: In an intrinsic semiconductor, the density of conduction electrons is 7.07 × 1015 m–3. When it is doped with indium, the density of holes becomes 5 × 1022 m–3. Find the density of conduction electrons in doped semiconductor
- a) 1 × 109 m–3
- b) 7 × 1015 m–3
- c) 5 × 1022 m–3
- d) Zero
Answer: 1 × 109 m–3
Question:
- a)
- b)
- c)
- d)
Answer:
Question: In an unbiased p-n junction which of the following is correct?
- a) n-side is at higher potential than p-side
- b) Both p-side and n-side are at the same potential
- c) p-side is at higher potential than n-side
- d) Any of the above is possible depending upon the carrier density in the two sides
Answer: n-side is at higher potential than p-side
Question: In a full wave rectifier circuit operating from 50 Hz mains frequency, the fundamental frequency in the ripple would be
- a) 100 Hz
- b) 70.7 Hz
- c) 25 Hz
- d) 25 Hz
Answer: 100 Hz
Question: In a semiconductor diode, the reverse biased current is due to drift of free electrons and holes caused by
- a) Thermal excitations only
- b) Impurity atoms only
- c) Both
- d) None of these
Answer: Thermal excitations only
Question: The value of form factor in case of half wave rectifier is
- a) 1.57
- b) 1.27
- c) 0.48
- d) 1.11
Answer: 1.57
Question: In a semiconductor diode, P-side is earthed and N-side is put at potential of –2 V, the diode shall
- a) Conduct
- b) Not conduct
- c) Conduct partially
- d) Break down
Answer: Conduct
Question:
- a) Second and third circuits
- b) All of these
- c) First and second circuits
- d) Third and first circuits
Answer: Second and third circuits
Question: The zener diode is used for
- a) Stabilization
- b) All of these
- c) Amplification
- d) Rectification
Answer: Stabilization
Question:
- a) Full wave rectified
- b) Half wave rectified
- c) Same as input
- d) Zero
Answer: Full wave rectified
Question: A junction diode, in which one of the p or n-sections is made very thin, can be used to convert light energy into electrical energy, then the diode is called
- a) Solar cell
- b) Photo diode
- c) Zener diode
- d) Light emitting diode
Answer: Solar cell
More Questions..................................
Question: The material suitable for making a solar cell is
- a) GaAs
- b) CdSe
- c) Ge
- d) PbS
Answer: GaAs
Question: In which of the configurations of a transistor, the power gain is highest?
- a) Common emitter
- b) Common collector
- c) Same in all the three
- d) Common base
Answer: Common emitter
Question: In a common base amplifier, the phase difference between the input signal voltage and the output voltage (across collector and base) is
- a) 0
- b)
- c)
- d)
Answer: 0
Question:
- a)
- b)
- c)
- d)
Answer:
Question:
- a) 0.2 V
- b) 0.8 V
- c) Zero
- d) 2 V
Answer: 0.2 V
Question: In a transistor the base is very lightly doped as compared to the emitter because by doing so
- a) Recombination is decreased in the base region
- b) Base current is high
- c) The flow across the base region is mainly because of holes
- d) The flow across the base region is mainly because of electrons
Answer: Recombination is decreased in the base region
Question:
- a) 75
- b) 60
- c) 50
- d) 45
Answer: 75
Question:
- a) 100
- b) 10
- c) 500
- d) 200
Answer: 100
Question:
- a)
- b)
- c)
- d)
Answer:
Question:
- a)
- b)
- c)
- d) None of these
Answer:
Question: In a common base transistor circuit, the current gain is 0.98. On changing emitter current by 5.00 mA, the change in collector current is
- a) 4.9 mA
- b) 5.1 mA
- c) 2.45 mA
- d) 0.196 mA
Answer: 4.9 mA
Question: For a transistor amplifier power gain and voltage gain are 7.5 and 2.5 respectively. The value of the current gain will be
- a) 3
- b) 0.99
- c) 0.66
- d) 0.33
Answer: 3
Question:
- a)
- b)
- c)
- d)
Answer:
Question: In a silicon transistor, a change of 7.89 mA is the emitter current produces a change of 7.8 mA in the collector current. What change in the base current is necessary to produce an equivalent change in the collector current?
- a) 0.09 mA
- b) Zero
- c) 0.9 mA
- d) 9 mA
Answer: 0.09 mA
Question:
- a) AND gate
- b) OR gate
- c) NOT gate
- d) NAND gate
Answer: AND gate
Question:
- a) NAND
- b) NOR
- c) XOR
- d) OR
Answer: NAND
Question:
- a) NAND
- b) NOR
- c) XOR
- d) XNOR
Answer: NAND
Question:
- a) OR
- b) AND
- c) NAND
- d) NOR
Answer: OR
Question:
- a) XOR gate
- b) NOR gate
- c) AND gate
- d) OR gate
Answer: XOR gate
Question:
- a)
- b)
- c)
- d)
Answer:
Question: Copper has face centred cubic lattice with interatomic spacing 2.5 Å. The value of lattice constant will be about
- a) 3.5 Å
- b) 7.0 Å
- c) 1.5 Å
- d) 0.35 Å
Answer: 3.5 Å
Question: Distance between body centred atom and a corner atom in sodium is (where a = lattice constant)
- a)
- b)
- c)
- d)
Answer:
Question: Liquid crystal display monitors are made of
- a) Liquid crystals
- b) Polycrystals
- c) Single crystals
- d) Monocrystals
Answer: Liquid crystals
Question: Which of the following cannot be obtained from an IC?
- a) Inductor
- b) Capacitor
- c) Diode
- d) Resistor
Answer: Inductor
Question: Operational amplifier is a
- a) Linear IC
- b) OR gate
- c) AND gate
- d) Digital IC
Answer: Linear IC
Question: In a zener diode, break down occurs in reverse bias due to
- a) Internal field emission
- b) All of these
- c) High doping concentration
- d) Impact ionisation
Answer: Internal field emission
Question: In an n-p-n transistor working in active mode, the depletion region
- a) At emitter-base junction is thinner than that at collector-base junction
- b) At the two junctions have equals width
- c) At emitter-base junction is wider than that at collector-base junction
- d) Is not formed
Answer: At emitter-base junction is thinner than that at collector-base junction
Question:
- a) 990
- b) 9900
- c) 99
- d) 9.9
Answer: 990
Question:
- a) 5 × 109 m–3
- b) 3 × 106 m–3
- c) 3.0 × 1022 m–3
- d) 1.5 × 1016 m–3
Answer: 5 × 109 m–3
Question:
- a) 900
- b) 300
- c) 200
- d) 100
Answer: 900
Question:
- a) 0 V
- b) –3 V
- c) –2.3 V
- d) –2.7 V
Answer: 0 V
Question: A p-n photodiode is manufactured from a semiconductor with band gap of 3.1 eV. Which of the following wavelengths can be detected by it?
- a) Both
- b) 4000 Å
- c) 3900 Å
- d) NONE OF THESE
Answer: Both
Question:
- a)
- b)
- c)
- d)
Answer:
Question: The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than 2480 nm is incident on it. The band gap of the semiconductor is
- a) 0.5 eV
- b) 0.7 eV
- c) 1.1 eV
- d) 0.3 eV
Answer: 0.5 eV
Question: Zener breakdown takes place if
- a) Doped impurity is high
- b) Less impurity in p-type
- c) Doped impurity is low
- d) Less impurity in N-part
Answer: Doped impurity is high
Question: In a p-n junction solar cell, the value of photo-electromotive force produced by monochromatic light is proportional to the
- a) Intensity of light falling on the cell
- b) Voltage applied at the p-n junction
- c) Barrier voltage at the p-n junction
- d) Frequency of light falling on the cell
Answer: Intensity of light falling on the cell
Question: In a transistor the collector current is always less than the emitter current because
- a) A few electrons are lost in the base and only remaining one’s reach the collector
- b) Collector being reverse biased, attracts less electrons
- c) Collector side is reverse biased and the emitter side is forward biased
- d) Collector side is forward biased and emitter side is reverse biased
Answer: A few electrons are lost in the base and only remaining one’s reach the collector
Question: The depletion region of p-n junction has a thickness of the order of
- a) 10–6 m
- b) 10–3 m
- c) 10–2 m
- d) 10–12 m
Answer: 10–6 m
Question: In an n-p-n transistor, the collector current is 10 mA. If 90% of the electrons emitted reach the collector, then the emitter current will be
- a) 11 mA
- b) 1 mA
- c) 0.1 mA
- d) 9 mA
Answer: 11 mA
Question:
- a)
- b)
- c)
- d)
Answer:
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MCQs for Physics JEE (Main) Full Syllabus Semiconductor Electronics
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