BITSAT Physics Semiconductor Electronics Materials Devices and Simple Circuits MCQs

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MCQ for Full Syllabus Physics Semiconductor Electronics Materials Devices and Simple Circuits

Full Syllabus Physics students should refer to the following multiple-choice questions with answers for Semiconductor Electronics Materials Devices and Simple Circuits in Full Syllabus.

Semiconductor Electronics Materials Devices and Simple Circuits MCQ Questions Full Syllabus Physics with Answers

 

Question: In the circuit given below, V(t) is the sinusoidal voltage source, voltage drop VAB(t) across the resistance R is

BITSAT Physics Semiconductor Electronics 1

  • a) Is half wave rectified
  • b) Is full wave rectified
  • c) Has the same peak value in the positive and negative half cycles
  • d) Has different peak values during positive and negative half cycle

Answer: Has different peak values during positive and negative half cycle

 

Question: In CE transistor amplifier, the audio signal voltage across the collector resistance of 2 kΩ is 2 V. If the base resistance is 1kΩ and the current amplification of the transistor is 100, the input signal voltage is

  • a) 2 mV
  • b) 3 mV
  • c) 10 mV
  • d) 0.1 mV

Answer: 10 mV

 

Question: An oscillator is nothing but an amplifer with

  • a) Positive feedback
  • b) Negative feedback
  • c) Large gain
  • d) No feedback

Answer: Positive feedback

 

Question: Assuming the diodes to be of silicon with forward resistance zero, the current I in the following circuit is

BITSAT Physics Semiconductor Electronics 2

  • a) 0
  • b) 9.65 mA
  • c) 10 mA
  • d) 10.35 mA

Answer: 10 mA

 

Question: For a CE transistor amplifier, the audio signal voltage across the collector resistance of 2.0 kΩ is 2.0 V. Suppose the current amplification factor of the transistor is 100, What should be the value of RB in series with VBB supply of 2.0V if the dc base current has to be 10 times the signal current?

  • a) 14 kΩ
  • b) 18 kΩ
  • c) 10 kΩ
  • d) 5 kΩ

Answer: 14 kΩ

 

Question: The combination of gates shown below yields

BITSAT Physics Semiconductor Electronics 3

  • a) OR gate
  • b) NOT gate
  • c) XOR gate
  • d) NAND gate

Answer: OR gate


Question: Transfer characteristics [output voltage (V0) vs input voltage (V1)] for a base biased transistor in CE configuration is as shown in the figure. For using transistor as a switch, it is used

BITSAT Physics Semiconductor Electronics 4

  • a) in region (III)
  • b) both in region (I) and (III)
  • c) in region (II)
  • d) in region (I)

Answer: both in region (I) and (III)

 

Question: If in a p-n junction diode, a square input signal of 10 V is applied as shown BITSAT Physics Semiconductor Electronics 5

BITSAT Physics Semiconductor Electronics 6 

Then the output signal across RL will be

  • a)

    BITSAT Physics Semiconductor Electronics 7

  • b)

    BITSAT Physics Semiconductor Electronics 8

  • c)

    BITSAT Physics Semiconductor Electronics 9

  • d)

    BITSAT Physics Semiconductor Electronics 10

Answer:

BITSAT Physics Semiconductor Electronics 7

 

Question: The output of an OR gate is connected to both the inputs of a NAND gate. The combination will serve as a:

  • a) NOT gate
  • b) NOR gate
  • c) AND gate
  • d) OR gate

Answer: NOR gate

 

Question: In a semiconductor diode, the barrier potential offers opposition to

  • a) Holes in P-region only
  • b) Free electrons in N-region only
  • c) Majority carriers in both regions
  • d) Majority as well as minority carriers in both regions

Answer: Majority carriers in both regions

  

Question: A transistor has a base current of 1 mA and emitter current 90 mA. The collector current will be

  • a) 90 mA
  • b) 1 mA
  • c) 89 mA
  • d) 91 mA

Answer: 89 mA

 

Question: A d.c. battery of V volt is connected to a series combination of a resistor R and an ideal diode D as shown in the figure below. The potential difference across R will be

BITSAT Physics Semiconductor Electronics 11

  • a) 2V when diode is forward biased
  • b) Zero when diode is forward biased
  • c) V when diode is reverse biased
  • d) V when diode is forward biased

Answer: V when diode is reverse biased

 

Question: Truth table for system of four NAND gates as shown in figure is :

BITSAT Physics Semiconductor Electronics 12

  • a)

    BITSAT Physics Semiconductor Electronics 13

  • b)

    BITSAT Physics Semiconductor Electronics 14

  • c)

    BITSAT Physics Semiconductor Electronics 15

  • d)

    BITSAT Physics Semiconductor Electronics 16

Answer:

BITSAT Physics Semiconductor Electronics 13

 

Question: In a common base amplifier the phase difference between the input signal voltage and the output voltage is

  • a) 0
  • b) π/4
  • c) π/2
  • d) π

Answer: 0

 

Question: A zener diode, having breakdown voltage equal to 15V, is used in a voltage regulator circuit shown in figure. The current through the diode is

BITSAT Physics Semiconductor Electronics 17

  • a) 10 mA
  • b) 15 mA
  • c) 20 mA
  • d) 5 mA

Answer: 5 mA

 

Question: In an unbiased n-p junction electrons diffuse from n-region to p-region because :

  • a) Holes in p-region attract them
  • b) Electrons travel across the junction due to potential difference
  • c) Only electrons move from n to p region and not the vice-versa
  • d) Electron concentration in n-region is more compared to that in p-region

Answer: Electron concentration in n-region is more compared to that in p-region

 

Question: In common emitter amplifier, the current gain is 62. The collector resistance and input resistance are 5 kΩ an 500Ω respectively. If the input voltage is 0.01 V, the output voltage is

  • a) 0.62 V
  • b) 6.2 V
  • c) 62 V
  • d) 620 V

Answer: 6.2 V

 

Question: An oscillator is nothing but an amplifer with

  • a) Positive feedback
  • b) Negative feedback
  • c) Large gain
  • d) No feedback

Answer: Positive feedback

 

Question: The output of an OR gate is connected to both the inputs of a NAND gate. The combination will serve as a:

  • a) NOT gate
  • b) NOR gate
  • c) AND gate
  • d) OR gate

Answer: NOR gate

 

Question: In a semiconductor diode, the barrier potential offers opposition to

  • a) Holes in P-region only
  • b) Free electrons in N-region only
  • c) Majority carriers in both regions
  • d) Majority as well as minority carriers in both regions

Answer: Majority carriers in both regions

 

MCQs for Semiconductor Electronics Materials Devices and Simple Circuits Physics Full Syllabus

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